Semiconductor quantum dot lasers have been extensively studied for applications in future lightwave telecommunications systems. Prof. Coleman described the growth, processing and characteristics of quantum dot and nanostructure lasers that exhibit interesting and potentially important effects arising from reduction of the active medium to the quantum regime (<50 nm) in all three dimensions. The motivation for quantum dots in lasers was outlined along with methods for forming self-assembled and patterned quantum dots. The resultant laser characteristics was presented. Prof. Coleman introduced a novel inverted quantum dot structure or nanopore laser, containing three dimensional quantization formed from an engineered periodicity.